High-Purity Silicone Wafer For Study 4-N-25　4xN

Feature

• With a proven track record in research and development, we offer wafers made from high-purity materials in small quantities.

Specifications

• Manufacturing method: CZ method
• Face orientation: 100
• OF position: 110
• Resistance: 0.1 to 100 Ω cm
• Particles: 0.3 μm, 10 pieces
• Size (Inch) × conduction type: 4 × N type
• Quantity: 1 box (25 pieces)
• * A custom-made product
• * The azimuth (Cut Angle), OF position angle tolerance, and thickness tolerance can be machined with smaller and more precise precision, enabling precise groove formation
• * Various shapes and surface treatments are possible (Example: Zulling, Holemaking, Wafer with Oxide Film)
• * The specific resistivity and the wafer thickness are applicable
• Type number: 4 × N type
• Please contact us at any time for 8 "or 12".
• RoHS3 (EU)2015/863 Certificates can be issued [About RoHS]

Package size

• Package size：270×220×240 mm 1 kg