High-Purity Silicone Wafer For Study 4 x P Type (Low Resistance)

Feature

• With a proven track record in research and development, we offer wafers made from high-purity materials in small quantities.

Specifications

• Size (Inch) × conduction type: 4 × P type (low resistance)
• OF length (mm) × wafer thickness (μm): 32.5 ± 2.5 x 525 ± 25
• Quantity: 1 box (25 pieces)
• Manufacturing method: CZ method
• Face orientation: 100
• OF position: 110
• Resistance value: ≦ 0.02 Ωcm
• Particles: 0.3 μm, 10 pieces
• * Special orders:
• The azimuth (Cut Angle), OF position angle tolerance, and thickness tolerance can be machined with smaller precision, enabling precise groove formation
• Various shapes and surface treatments are possible (Example: Counterbore, Holemaking, and Oxide Wafer)
• The specific resistivity and the wafer thickness are applicable
• Please contact us at any time for 8 "or 12".
• RoHS3 (EU)2015/863 Certificates can be issued [About RoHS]